OSA's Digital Library

Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 8, Iss. 8 — Aug. 1, 1991
  • pp: 1766–1769

Second-harmonic generation by an SiO2–Si interface: influence of the oxide layer

L. L. Kulyuk, D. A. Shutov, E. E. Strumban, and O. A. Aktsipetrov  »View Author Affiliations


JOSA B, Vol. 8, Issue 8, pp. 1766-1769 (1991)
http://dx.doi.org/10.1364/JOSAB.8.001766


View Full Text Article

Acrobat PDF (516 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

A method that uses second-harmonic generation is applied to the study of the oxidized Si(111) surface by <i>in situ</i> control of thermal and synthetic oxide etching with monolayer atomic resolution. It is shown that the thin oxide layer that is adjacent to the Si surface (with a 5–10-Å thickness) exerts a strong influence on the reflected second-harmonic intensity. The contribution of the remaining bulk oxide is insignificant. Various contributions to the nonlinear polarization in the SiO<sub>2</sub>–Si interface, such as the static electric field, the inhomogeneous deformation, and the effect of a crystalline oxide layer, are considered.

© 1991 Optical Society of America

Citation
L. L. Kulyuk, D. A. Shutov, E. E. Strumban, and O. A. Aktsipetrov, "Second-harmonic generation by an SiO2–Si interface: influence of the oxide layer," J. Opt. Soc. Am. B 8, 1766-1769 (1991)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-8-8-1766


Sort:  Author  |  Year  |  Journal  |  Reset

References

  1. H. W. K. Tom, T. F. Heinz, and Y. R. Shen, "Second-harmonic reflection from silicon surfaces and its relation to structural symmetry," Phys. Rev. Lett. 51, 1983–1986 (1983).
  2. T. F. Heinz, M. M. T. Loy, and W. A. Thompson, "Study of Si(111) surfaces by optical second-harmonic generation: reconstruction and surface phase transformation," Phys. Rev. Lett. 54, 63–66 (1984).
  3. Y. R. Shen, "Surface studies by optical second harmonic generation," J. Vac. Sci. Technol. B 3(5), 1464–1466 (1985).
  4. Y. R. Shen, The Principles of Nonlinear Optics (Wiley, New York, 1984).
  5. P. Guyot-Sionnest, W. Chen, and Y. R. Shen, "General considerations on optical second-harmonic generation from surfaces and interfaces," Phys. Rev. B 33, 8254–8263 (1986).
  6. P. Guyot-Sionnest and Y. R. Shen, "Bulk contribution in surface second-harmonic generation," Phys. Rev. B 38, 7985–7989 (1988).
  7. T. F. Heinz, M. M. T. Loy, and W. A. Thompson, "Study of symmetry and disordering of Si(111)−7 × 7 surfaces by optical second harmonic generation," J. Vac. Sci. Technol. B 3(5), 1467–1470 (1985).
  8. S. V. Govorcov, V. I. Emel'yanov, N. I. Koroteev, G. I. Petrov, I. L. Shumay, and V. V. Yakovlev, "Inhomogeneous deformation of silicon surface layers probed by second-harmonic generation in reflection," J. Opt. Soc. Am. B 6, 1117–1123 (1989).
  9. N. F. Mott, "Silicon dioxide and the chalcogenide semiconductors; similarities and differences," Adv. Phys. 26, 363–391 (1977).
  10. C. H. Lee, R. K. Chang, and N. Bloembergen, "Nonlinear electroreflectance in silicon and silver," Phys. Rev. Lett. 18, 167–170 (1967).
  11. O. A. Aktsipetrov and E. D. Mishina, "The optical nonlinear electroreflectance in germanium and silicon," Sov. Phys. Dokl. 29, 62–65 (1984).
  12. A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, "Sio2 transformation: interfacial structure and mechanism," Phys. Rev. Lett. 59, 213–217 (1987).
  13. A. V. Emel'yanov and V. V. Egorkin, "About the structure of the transition layer in Si/SiO2 interface," Sov. Phys. Poverkhnost 11, 44–50 (1987).
  14. O. A. Aktsipetrov, I. M. Baranova, Jy. N. Il'inski, "The surface contribution for second harmonic generation reflected from a centrosymmetric semiconductor," Sov. Phys. JETP 64, 167–173 (1986).
  15. J. E. Sipe, D. J. Moss, and H. M. van Driel, "Phenomenological theory of optical second- and third-harmonic generation from cubic centrosymmetric crystals," Phys. Rev. B 35, 1129–1141 (1987).
  16. C. W. van Hesselt, M. A. Verheijen, and Th. Rasing, "Vicinal Si(111) surfaces studied by optical second-harmonic generation: step induced anisotropy and surface-bulk discrimination," Phys. Rev. B 42, 9263–9266 (1990).
  17. A. M. Tonshin, B. A. Kamaritski, and V. N. Spector, "The technology structure and properties of siliconorganic dielectric—polyorganosilseskviloxan," Sov. Chem. Usp. 52, 1365–1409 (1983).

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited