Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe
JOSA B, Vol. 9, Issue 3, pp. 405-414 (1992)
http://dx.doi.org/10.1364/JOSAB.9.000405
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Abstract
We extend the application of the Z-scan experimental technique to determine free-carrier nonlinearities in the presence of bound electronic refraction and two-photon absorption. We employ this method, using picosecond pulses in CdTe, GaAs, and ZnTe at 1.06 μm and in ZnSe at 1.06 and 0.53 μm, to measure the refractive-index change induced by two-photon-excited free carriers (coefficient σr,), the two-photon absorption coefficient β, and the bound electronic nonlinear refractive index n2. The real and imaginary parts of the third-order susceptibility (i.e., n2 and β respectively) are determined by Z scans with low inputs, and the refraction from carriers generated by two-photon absorption (an effecitve fifth-order nonlinearity) is determined from Z scans with higher input energies. We compare our experimental results with theoretical models and deduce that the three measured parameters are well predicted by simple two-band models. n2 changes from positive to negative as the photon energy approaches the band edge, in accordance with a recent theory of the dispersion of n2 in solids based on Kramers—Kronig transformations [Phys. Rev. Lett. 65, 96 (1990); IEEE J. Quantum Electron. 27, 1296 (1991)]. We find that the values of σr are in agreement with simple band-filling models.
© 1992 Optical Society of America
Citation
A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. Van Stryland, "Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe," J. Opt. Soc. Am. B 9, 405-414 (1992)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-9-3-405
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