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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 9, Iss. 3 — Mar. 1, 1992
  • pp: 415–419

Effect of shallow traps on electron—hole competition in semi-insulating photorefractive materials

P. Tayebati  »View Author Affiliations


JOSA B, Vol. 9, Issue 3, pp. 415-419 (1992)
http://dx.doi.org/10.1364/JOSAB.9.000415


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Abstract

A model of the photorefractive effect is presented that includes a shallow-trap level (hole or electron trap) as well as a species of deep traps with electron and hole excitation. It is shown that, if the shallow traps can trap a significant density of charge carriers, the electron—hole competition factor ξ and the photorefractive grating can switch signs as a function of intensity. This effect may be realized in BaTiO<sub>3</sub> crystals, in which the photorefractive effect is strongly affected by electron—hole competition as well as by shallow traps. As in the case of the single-charge-carrier model, it is shown that each of the charge gratings in the shallow and deep levels consists of in-phase gratings and a screening grating. It is shown that part of the screening gratings remains nonzero at infinitly large grating spacings.

© 1992 Optical Society of America

Citation
P. Tayebati, "Effect of shallow traps on electron—hole competition in semi-insulating photorefractive materials," J. Opt. Soc. Am. B 9, 415-419 (1992)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-9-3-415


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References

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