We have measured the temperature dependence of the electron mobility in a single crystal of photorefractive n-type cubic Bi<sub>12</sub>SiO<sub>20</sub> by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm<sup>2</sup>/(V s) at room temperature, has a temperature dependence of the Arrhenius form, with an activation energy of 320 ± 40 meV in the experimental range 270–310 K.
© 1992 Optical Society of America
P. Nouchi, J. P. Partanen, and R. W. Hellwarth, "Temperature dependence of the electron mobility in photorefractive Bi12SiO20," J. Opt. Soc. Am. B 9, 1428-1431 (1992)