Temperature dependence of the electron mobility in photorefractive Bi12SiO20
JOSA B, Vol. 9, Issue 8, pp. 1428-1431 (1992)
http://dx.doi.org/10.1364/JOSAB.9.001428
Acrobat PDF (420 KB)
Abstract
We have measured the temperature dependence of the electron mobility in a single crystal of photorefractive n-type cubic Bi12SiO20 by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm2/(V s) at room temperature, has a temperature dependence of the Arrhenius form, with an activation energy of 320 ± 40 meV in the experimental range 270–310 K.
© 1992 Optical Society of America
Citation
P. Nouchi, J. P. Partanen, and R. W. Hellwarth, "Temperature dependence of the electron mobility in photorefractive Bi12SiO20," J. Opt. Soc. Am. B 9, 1428-1431 (1992)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-9-8-1428
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
« Previous Article | Next Article »
OSA is a member of 