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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 9, Iss. 8 — Aug. 1, 1992
  • pp: 1428–1431

Temperature dependence of the electron mobility in photorefractive Bi12SiO20

P. Nouchi, J. P. Partanen, and R. W. Hellwarth  »View Author Affiliations


JOSA B, Vol. 9, Issue 8, pp. 1428-1431 (1992)
http://dx.doi.org/10.1364/JOSAB.9.001428


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Abstract

We have measured the temperature dependence of the electron mobility in a single crystal of photorefractive n-type cubic Bi<sub>12</sub>SiO<sub>20</sub> by using a holographic time-of-flight technique. Our results show that the mobility, with a value μ = 0.24 ± 0.07 cm<sup>2</sup>/(V s) at room temperature, has a temperature dependence of the Arrhenius form, with an activation energy of 320 ± 40 meV in the experimental range 270–310 K.

© 1992 Optical Society of America

Citation
P. Nouchi, J. P. Partanen, and R. W. Hellwarth, "Temperature dependence of the electron mobility in photorefractive Bi12SiO20," J. Opt. Soc. Am. B 9, 1428-1431 (1992)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-9-8-1428

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