OSA's Digital Library

Journal of the Optical Society of Korea

Journal of the Optical Society of Korea

| PUBLISHED BY THE OPTICAL SOCIETY OF KOREA

  • Vol. 11, Iss. 3 — Sep. 25, 2007
  • pp: 133–137

Comparison of Quantum Wells based on InGaAs(P)/InP and InGa(Al)As/InAlAs Material Systems in View of Carrier Escape Times for High-Saturation-Optical-Power Electroabsorption Modulators

Kang-Baek Kim and Dong-Soo Shin  »View Author Affiliations


Journal of the Optical Society of Korea, Vol. 11, Issue 3, pp. 133-137 (2007)


View Full Text Article

Acrobat PDF (308 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of <TEX>$1.55{\mu}m$</TEX>, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.

© 2007 Optical Society of Korea

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

History
Original Manuscript: August 27, 2007
Revised Manuscript: September 15, 2007
Published: September 25, 2007

Citation
Kang-Baek Kim and Dong-Soo Shin, "Comparison of Quantum Wells based on InGaAs(P)/InP and InGa(Al)As/InAlAs Material Systems in View of Carrier Escape Times for High-Saturation-Optical-Power Electroabsorption Modulators," J. Opt. Soc. Korea 11, 133-137 (2007)
http://www.opticsinfobase.org/josk/abstract.cfm?URI=josk-11-3-133


Sort:  Year  |  Journal  |  Reset

References

  1. C. H. Henry, "The origin of quantum wells and the quantum well laser," in Quantum Well Lasers, P. S. Zory, Jr., ed. (Academic Press, San Diego, 1993), pp. 8-13
  2. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Bandedge electro-absorption in quantum well structures: the quantum confined Stark effect," Phys. Rev. Lett., vol. 53, no. 22, pp. 2173-2177, 1984 [CrossRef]
  3. Y. Miyazaki, H. Tada, S. Tokizaki, K. Takagi, Y. Hanamaki, T. Aoyagi, and Y. Mitsui, "+1 dBm average optical output power operation of small-chirp 40-Gbps electroabsorption modulator with tensile-strained asymmetric quantum-well absorption layer," IEEE J. Quantum Electron., vol. 39, no. 8, pp. 1009-1017, 2003 [CrossRef]
  4. J.-R. Kim, "Study of several schemes for internal wavelength locker integrated 10 Gbps electro-absorption modulated laser modules in metro dense WDM applications," J. Opt. Soc. Korea, vol. 8, no. 2, pp. 55-58, 2004
  5. W. J. Choi and J. C. Yi, "Linearization of multiple quantum well electro-absorption modulator by using quantum well intermixing," J. Korean Phys. Soc., vol. 46, no. 6, pp. 1452-1457, 2005
  6. Y. Miyazaki, T. Yamatoya, K. Matsumoto, K. Kuramoto, K. Shibata, T. Aoyagi, and T. Ishikawa, "High-power ultralow-chirp 10-Gb/s electroabsorption modulator integrated laser with ultrashort photocarrier lifetime," IEEE J. Quantum Electron., vol. 42, no. 4, pp. 357-362, 2006 [CrossRef]
  7. C. H. Cox, III., Analog Optical Links: Theory and Practice (Cambridge University Press, New York, 2004), pp. 74-79
  8. D. J. Moss, M. Aoki, and H. Sano, "Comparison of photoconductive response times of InGaAs/InAlAs and InGaAs/InGaAsP multi-quantum well waveguide modulator," Jpn. J. Appl. Phys., vol. 33, pp. L328-L330, 1994 [CrossRef]
  9. B. J. Hawdon, T. Tutken, A. Hangleiter, R. W. Glew, and J. E. A. Whiteaway, "Direct comparison of InGaAs/ InGaAlAs and InGaAs/InGaAsP quantum well modulators," Electron. Lett., vol. 29, no. 8, pp. 705-707, 1993 [CrossRef]
  10. D.-S. Shin, "Effect of a step barrier on the quantumconfined Stark effect and applications to electroabsorption modulators with high saturation optical power," J. Korean Phys. Soc., vol. 47, no. 2, pp. 364-370, 2005
  11. S. A. Pappert, Ph. D. Dissertation, Univ. of California, San Diego, 1993
  12. A. M. Fox, D. A. B. Miller, G. Livescu, J. E. Cunningham, and W. Y. Jan, "Quantum well carrier sweep out: relation to electroabsorption and exciton saturation," IEEE J. Quantum Electron., vol. 27, no. 10, pp. 2281-2295, 1991 [CrossRef]
  13. D.-S. Shin, "Reduction in escape times of photogenerated charge carriers with asymmetric intrastep quantum wells and subsequent improvement in saturation optical intensity," Jpn. J. Appl. Phys., vol. 45, no. 12, pp. 9063-9065, 2006 [CrossRef]

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited