Intensity-dependent dynamics of photoinduced absorption in CdS0.4/Se0.6 semiconductor doped glasses
Journal of the Optical Society of Korea, Vol. 1, Issue 1, pp. 15-18 (1997)
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Abstract
Intensity dependent dynamics of photoinduced absorption in <TEX>$CdS_{0.4}$</TEX>/<TEX>$Se_{0.6}$</TEX> semiconductor doped glasses below the band gap was investigated by using time-resolved differential transmittance spectroscopy. The carriers populated through ultrafast trapping at semiconductor-glass interfaces give rise to a broad photoinduced absorption below the band gap. The decay time of transient absorption depends strongly on the excitation intensity. Based on our results, the physical mechanism for photoinduced absorption processes was suggested.
© 1997 Optical Society of Korea
History
Original Manuscript: January 27, 1997
Published: March 1, 1997
Citation
Jung-Chul Seo, Dong-Ho Kim, and Hong-Jin Kong, "Intensity-dependent dynamics of photoinduced absorption in CdS0.4/Se0.6 semiconductor doped glasses," J. Opt. Soc. Korea 1, 15-18 (1997)
http://www.opticsinfobase.org/josk/abstract.cfm?URI=josk-1-1-15
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