MQW electroabsorption modulator integrated with a tapered waveguide vertical interconnect
Journal of the Optical Society of Korea, Vol. 1, Issue 1, pp. 44-47 (1997)
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Abstract
The integration of a GaAs/AlGaAs multi-quantum well electroabsorption modulator and a tapered waveguide vertical direction optical interconnect has been performed without the complicated regrowth process. Zn impurity-induced layer disordering of MQW layer is used to achieve the energy transfer between SQW and MQW regions. Light coupled into a SQW region was transferred to an MQW region and an intensity modulation of 10 dB extinction ratio was demonstrated.
© 1997 Optical Society of Korea
History
Original Manuscript: February 4, 1997
Published: March 1, 1997
Citation
Sang-Kook Han, "MQW electroabsorption modulator integrated with a tapered waveguide vertical interconnect," J. Opt. Soc. Korea 1, 44-47 (1997)
http://www.opticsinfobase.org/josk/abstract.cfm?URI=josk-1-1-44
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