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Journal of the Optical Society of Korea

Journal of the Optical Society of Korea

| PUBLISHED BY THE OPTICAL SOCIETY OF KOREA

  • Vol. 12, Iss. 4 — Dec. 25, 2008
  • pp: 288–297

Analysis of Temperature Effects on Raman Silicon Photonic Devices

Won-Chul Kim and Dong-Wook Park  »View Author Affiliations


Journal of the Optical Society of Korea, Vol. 12, Issue 4, pp. 288-297 (2008)


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Abstract

Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.

© 2008 Optical Society of Korea

OCIS Codes
(130.4310) Integrated optics : Nonlinear
(160.4760) Materials : Optical properties
(190.4970) Nonlinear optics : Parametric oscillators and amplifiers
(190.5650) Nonlinear optics : Raman effect
(290.5910) Scattering : Scattering, stimulated Raman

History
Original Manuscript: October 8, 2008
Revised Manuscript: November 13, 2008
Manuscript Accepted: November 13, 2008
Published: December 31, 2008

Citation
Won-Chul Kim and Dong-Wook Park, "Analysis of Temperature Effects on Raman Silicon Photonic Devices," J. Opt. Soc. Korea 12, 288-297 (2008)
http://www.opticsinfobase.org/josk/abstract.cfm?URI=josk-12-4-288


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