OSA's Digital Library

Journal of the Optical Society of Korea

Journal of the Optical Society of Korea


  • Vol. 12, Iss. 4 — Dec. 25, 2008
  • pp: 288–297

Analysis of Temperature Effects on Raman Silicon Photonic Devices

Won-Chul Kim and Dong-Wook Park  »View Author Affiliations

Journal of the Optical Society of Korea, Vol. 12, Issue 4, pp. 288-297 (2008)

View Full Text Article

Acrobat PDF (1130 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.

© 2008 Optical Society of Korea

OCIS Codes
(130.4310) Integrated optics : Nonlinear
(160.4760) Materials : Optical properties
(190.4970) Nonlinear optics : Parametric oscillators and amplifiers
(190.5650) Nonlinear optics : Raman effect
(290.5910) Scattering : Scattering, stimulated Raman

Original Manuscript: October 8, 2008
Revised Manuscript: November 13, 2008
Manuscript Accepted: November 13, 2008
Published: December 31, 2008

Won-Chul Kim and Dong-Wook Park, "Analysis of Temperature Effects on Raman Silicon Photonic Devices," J. Opt. Soc. Korea 12, 288-297 (2008)

Sort:  Year  |  Journal  |  Reset


  1. R. Soref, “The past, present, and future of silicon photonics,” J. IEEE Quantum Elec., vol. 12, no. 6, pp. 1678-1687, 2006 [CrossRef]
  2. B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Tech., vol. 24, no. 12, pp. 4600-4615, 2006 [CrossRef]
  3. G. T. Reed and A. P. Knights, Silicon Photonics - An Introduction, (John Wiley & Sons, NJ, 2004)
  4. B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” J. IEEE Quantum Elec., vol. 12, no. 3, pp. 412-421, 2006 [CrossRef]
  5. H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang, and M. Paniccla, “An all-silicon Raman laser,” Nature, vol. 433, no. 20, pp. 292-294, 2005 [CrossRef]
  6. V. Raghunathan, R. Claps, D. Dimitropoulos, and B. Jalali, “Parametric Raman wavelength conversion in scaled silicon waveguide,” J. Lightwave Tech., vol. 23, no. 6, pp. 2904-2102, 2005 [CrossRef]
  7. T. R. Hart, R. L. Aggarwal, and B. Lax, “Temperature dependence of Raman scattering in silicon,” Phys. Rev., vol. 148, no. 2 pp. 845-848, 1966 [CrossRef]
  8. P. G. Klemens, “Anharmonic decay of optical phonons,” Phys. Rev., vol. 148, no. 2 pp. 845-848, 1966 [CrossRef]
  9. J. M. Ralston and R. K. Chang, “Spontaneous-Raman scattering efficiency and stimulated scattering in silicon,” Phys. Rev. B., vol. 2, no. 6, pp. 1858-1862, 1970 [CrossRef]
  10. M. Balkanski, R. F. Wallis, and E. Haro, “Anharmornic effects in light scattering due to optical phonon in silicon,” Phys. Rev. B., vol. 28, no. 4, pp. 1928-1934, 1983 [CrossRef]
  11. A. Compaan and H. J. Trodahl, “Resonance Raman scattering in Si at elevated temperatures,” Phys. Rev. B., vol. 29, no. 2, pp. 793-801, 1984 [CrossRef]
  12. G. P. Agrawal, Nonlinear Fiber Optics, 3rded., (Academic Press, San Diego, 2002)
  13. E. Golovchenko, P. V. Mamyshev, A. N. Pilipetskii, and E. M. Dianov, “Mutual influence of parametric effects and stimulated Raman scattering in optical waveguide,” J. IEEE Quantum Elec., vol. 26, no. 10, pp. 1815-1820, 1990 [CrossRef]
  14. R. Loudon, “The Raman effect in crystals,” Advan. Phys. vol. 13, pp. 423-482, 1964 [CrossRef]
  15. C. Kittel, Introduction to Solid State Physics, 8th ed, (John Wiley & Sons, Hoboken, NJ, 2005)
  16. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, 3rd ed., (Springer-Verlag, Berlin, 2001)
  17. H. Rong, A. Liu, R. Nicolaescu, M. Paniccia, O. Cohen, and D. Hak, “Raman gain and nonlinear optical absorption measurements in a low-loss silicon waveguide,” Appl. Phys. Lett., vol. 85, no. 12, pp. 2196-2198, 2004 [CrossRef]
  18. J. Niu, J. Sha, and D. Yang, “Temperature dependence of first-order Raman scattering in silicon nanowire,” Scrip. Mat., vol. 55, pp. 183-186, 2006 [CrossRef]
  19. Y. R. Shen and N. Bloembergen, “Theory of stimulated Brillouin and Raman scattering,” Phys. Rev. vol. 137, no. 6A, pp. A1787-A1805, 1965 [CrossRef]
  20. Y. R. Shen, The Principles of Nonlinear Optics, (John Wiley & Sons, New York, 1984)
  21. R. Claps and D. Dimitropoulos, Y. Han, B. Jalali, “Observation of Raman emission in silicon waveguide at 1.54um,” Opt. Exp., vol. 10. no. 22, pp. 1305-1313, 2002
  22. J. Touminen, T. Niemi, and H. Ludvigsen, “Wavelength reference for optical telecommunications based on a temperature-tunable silicon etalon,” Rev. Sci. Instrum., vol. 74, no. 8, pp. 3620-3623, 2003 [CrossRef]
  23. R. W. Boyd, Nonlinear Optics, 2nded., (Academic Press, San Diego, 2003
  24. L. Pavesi and D. J. Lockwood, Silicon Photonics, (Springer-Verlag, Berlin, 2004)

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited