Abstract
The epitaxial layer structures for blue InGaN light emitting diodes have been optimized
for high brightness applications with the output power levels exceeding 1000
W/cm<sup>2</sup> by using a self-consistent finite element method. The
light-current-voltage relationship has been directly estimated from the multiband Hamiltonian for
wurtzite crystals. To analyze the efficiency droop at high injection levels, the major nonradiative
recombination processes and carrier spillover have also been taken into account. The wall-plug
efficiency at high injection levels up to several thousand A/cm<sup>2</sup> has been
successfully evaluated for various epilayer structures facilitating optimization of the epitaxial
structures for desired output power levels.
© 2012 Optical Society of Korea
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