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Journal of the Optical Society of Korea

Journal of the Optical Society of Korea


  • Vol. 3, Iss. 1 — Mar. 30, 1999
  • pp: 10–14

Characterization of Doped Silicon from 0.1 to 2.5 THz Using Multiple Reflection

Tae-In Jeon  »View Author Affiliations

Journal of the Optical Society of Korea, Vol. 3, Issue 1, pp. 10-14 (1999)

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Via THz Time domain spectroscopy, the characterization of high conductive n-type, 1.31Ω cm silicon can be measured by directly analyzing the multiple reflections using Fabry-Perot theory. The magnitude and phase difference of total transmission show good agreement between theoretical and experimental values over a 2.5 THz frequency range with complex index of refraction and power absorption. The measured absorption and dispersion are strongly frequency-dependent, and all of the results are well fit by a Cole-Davidson type distribution

© 1999 Optical Society of Korea

Original Manuscript: January 12, 1999
Published: March 1, 1999

Tae-In Jeon, "Characterization of Doped Silicon from 0.1 to 2.5 THz Using Multiple Reflection," J. Opt. Soc. Korea 3, 10-14 (1999)

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