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Journal of the Optical Society of Korea

Journal of the Optical Society of Korea


  • Vol. 15, Iss. 1 — Mar. 1, 2011
  • pp: 1–3

Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS Technology

Myung-Jae Lee and Woo-Young Choi  »View Author Affiliations

Journal of the Optical Society of Korea, Vol. 15, Issue 1, pp. 1-3 (2011)

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We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and $P^+$/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the $P^+$/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.

© 2011 Optical Society of Korea

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(200.4650) Optics in computing : Optical interconnects
(040.1345) Detectors : Avalanche photodiodes (APDs)
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)

Original Manuscript: November 26, 2010
Revised Manuscript: March 3, 2011
Manuscript Accepted: March 4, 2011
Published: March 25, 2011

Myung-Jae Lee and Woo-Young Choi, "Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS Technology," J. Opt. Soc. Korea 15, 1-3 (2011)

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