Tb<sub>3</sub>Al<sub>5</sub>O<sub>3</sub>12:Ce (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above 700°C was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the <i>4f</i> ground level to the <i>5d</i><sup>1</sup> excited levels of Ce ion.
© 2012 Optical Society of Korea
Original Manuscript: January 6, 2012
Revised Manuscript: January 30, 2012
Manuscript Accepted: January 30, 2012
Published: March 25, 2012
Kang-Min Kim, Jun-Ho Chung, and Jeong-Ho Ryu, "Thin Film Deposition of Tb3Al5O312:Ce by Pulsed Laser Ablation and Effects of Low-temperature Post-annealing," J. Opt. Soc. Korea 16, 76-79 (2012)
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