Tb3Al5O312:Ce (TAG:Ce) thin films were successfully deposited by a pulsed laser ablation method on a quartz substrate, and low-temperature post-annealing effects on luminescent properties were investigated in detail. TAG:Ce thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The as-deposited films were amorphous, and post-annealing above 700°C was required for crystallization. The post-annealed TAG:Ce thin films showed strong and broad emission bands around 542 nm and excitations at 451 nm, which all corresponded to transitions between the 4f ground level to the 5d1 excited levels of Ce ion.
© 2012 Optical Society of Korea
Original Manuscript: January 6, 2012
Revised Manuscript: January 30, 2012
Manuscript Accepted: January 30, 2012
Published: March 25, 2012
Kang-Min Kim, Jun-Ho Chung, and Jeong-Ho Ryu, "Thin Film Deposition of Tb3Al5O312:Ce by Pulsed Laser Ablation and Effects of Low-temperature Post-annealing," J. Opt. Soc. Korea 16, 76-79 (2012)
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