Single Mode Lasing in InGaAsP/InP Semiconductor Coupled Square Ring Cavities
Journal of the Optical Society of Korea, Vol. 16, Issue 2, pp. 157-161 (2012)
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Abstract
This work reports the stability of the resonant characteristics in multimode interferometer coupled square ring semiconductor cavities. Based on the analysis of single square ring cavities, the single mode operations in the multimode interferometer coupled ring cavities are analyzed and the devices are demonstrated on the semiconductor multiple quantum well epitaxial structure. By varying the lasing conditions such as substrate temperature and input pump power, single resonant mode operations are also observed.
© 2012 Optical Society of Korea
OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.5990) Integrated optics : Semiconductors
(140.3570) Lasers and laser optics : Lasers, single-mode
(140.3948) Lasers and laser optics : Microcavity devices
History
Original Manuscript: April 5, 2012
Revised Manuscript: April 23, 2012
Manuscript Accepted: May 9, 2012
Published: June 25, 2012
Citation
Kyung-Sook Hyun, Tae-Kyu Lee, and Hee-Jong Moon, "Single Mode Lasing in InGaAsP/InP Semiconductor Coupled Square Ring Cavities," J. Opt. Soc. Korea 16, 157-161 (2012)
http://www.opticsinfobase.org/josk/abstract.cfm?URI=josk-16-2-157
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