Abstract
We propose optical proximity corrections (OPCs) for digital micromirror device
(DMD)-based maskless lithography. A pattern writing scheme is analyzed and a theoretical model for
obtaining the dose distribution profile and resulting structure is derived. By using simulation
based on this model we were able to reduce the edge placement error (EPE) between the design width
and the critical dimension (CD) of a fabricated photoresist, which enables improvement of the CD.
Moreover, by experiments carried out with the parameter derived from the writing scheme, we
minimized the corner-rounding effect by controlling light transmission to the corners of a feature
by modulating a DMD.
© 2012 Optical Society of Korea
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