The epitaxial layer structures for blue InGaN light emitting diodes have been optimized for high brightness applications with the output power levels exceeding 1000 W/cm<sup>2</sup> by using a self-consistent finite element method. The light-current-voltage relationship has been directly estimated from the multiband Hamiltonian for wurtzite crystals. To analyze the efficiency droop at high injection levels, the major nonradiative recombination processes and carrier spillover have also been taken into account. The wall-plug efficiency at high injection levels up to several thousand A/cm<sup>2</sup> has been successfully evaluated for various epilayer structures facilitating optimization of the epitaxial structures for desired output power levels.
© 2012 Optical Society of Korea
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics
(270.5580) Quantum optics : Quantum electrodynamics
Original Manuscript: June 25, 2012
Revised Manuscript: July 31, 2012
Manuscript Accepted: August 1, 2012
Published: September 25, 2012
Kyung-Soo Kim and Jong-Chang Yi, "Epitaxial Structure Optimization for High Brightness InGaN Light Emitting Diodes by Using a Self-consistent Finite Element Method," J. Opt. Soc. Korea 16, 292-298 (2012)
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