Abstract
For the conventionally polished fused silica substrate, an around 100 nm depth
redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded
in the redeposition polishing layer were the dominant factor that limited the laser induced damage
threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching,
super-precise polishing and ion beam etching were employed in different ways to eliminate these
absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these
substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among
these techniques only the ion beam etching method, which can effectively remove the polishing
compound and did not induce extra absorbers during the disposal process, can successfully improve
the LIDT of AR coatings.
© 2013 Optical Society of Korea
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