In this study, we propose a simple and indirect method to determine the optical constants of Mo and ITO thin films in the extreme ultraviolet (EUV) wavelength region by using X-ray reflectometry (XRR) and Rutherford backscattering spectrometry (RBS). Mo and ITO films were deposited on silicon substrates by using an RF magnetron sputtering method. The density and the composition of the deposited films were evaluated from the XRR and RBS analysis, respectively and then the optical constants of the Mo and ITO films were determined by an indirect optical method. The results suggest that the indirect method by using the XRR and RBS analysis will be useful to search for suitable high absorbing EUVL mask material quickly.
© 2013 Optical Society of Korea
(120.4530) Instrumentation, measurement, and metrology : Optical constants
(220.3740) Optical design and fabrication : Lithography
(310.6860) Thin films : Thin films, optical properties
(340.7480) X-ray optics : X-rays, soft x-rays, extreme ultraviolet (EUV)
Original Manuscript: October 30, 2012
Revised Manuscript: January 21, 2013
Manuscript Accepted: January 22, 2013
Published: February 25, 2013
Hee Young Kang, Jai Dong Lim, Pazhanisami Peranantham, and Chang Kwon HwangBo, "Determination of Optical Constants of Thin Films in Extreme Ultraviolet Wavelength Region by an Indirect Optical Method," J. Opt. Soc. Korea 17, 38-43 (2013)
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