In the process of lithography using ultra violet light sources for semiconductor devices, most of defects are made by sub-micrometer pollutants generated at photochemical reactions. We proposed and developed a novel vibration-insensitive on-axis interferometer with a sub-micrometer lateral resolution by using the interference between two beams: one scattered from defects and the other reflected from a reference area without defects. The proposed system was successfully demonstrated to detect a small Al defect of 0.5 μm diameter within the inspection time of less than 30 minutes over the area of the photo-mask which is 6 inch by 6 inch square.
© 2013 Optical Society of Korea
(120.4630) Instrumentation, measurement, and metrology : Optical inspection
(120.4640) Instrumentation, measurement, and metrology : Optical instruments
(120.4820) Instrumentation, measurement, and metrology : Optical systems
(220.4830) Optical design and fabrication : Systems design
Original Manuscript: December 5, 2012
Revised Manuscript: January 22, 2013
Manuscript Accepted: January 22, 2013
Published: February 25, 2013
Sangon Lee, Jae Heung Jo, Jong Soo Kim, and Il Kweon Moon, "Detection System for Sub-micrometer Defects of a Photo-mask Using On-axis Interference between Reflected and Scattered Lights," J. Opt. Soc. Korea 17, 73-80 (2013)
References are not available for this paper.
OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.