This paper describes the results of studies of the luminescence properties of ZnSe crystals containing the isovalent impurity Te. Taking into account defect-formation mechanisms in combination with modulation-spectroscopy methods made it possible to determine the conditions under which recombination processes via local deep levels or donor-acceptor pairs are dominant.
V. P. Makhnii and I. V. Tkachenko, "Mechanism for forming the red emission band of ZnSe
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