Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Experimental study of how the photosensitive elements of optoelectronic devices react to pulsed illumination

Not Accessible

Your library or personal account may give you access

Abstract

This paper presents the results of a study of how pulsed radiation with a continuous spectrum created by a plasma light source based on magnetostriction discharge acts on the photosensitive elements of optoelectronic devices. The threshold values of the energy exposure are determined that cause a reduction of the photocurrent of a silicon element of a solar battery, reversible changes of the sensitivity of a silicon photodiode, and reversible changes of the sensitivity and resolving power of a silicon photodetector array with charge accumulation.

© 2009 Optical Society of America

PDF Article
More Like This
Study of the photosensitivity of GeS binary glasses to 800nm femtosecond pulses

S.H. Messaddeq, J.P. Bérubé, M. Bernier, I. Skripachev, R. Vallée, and Y. Messaddeq
Opt. Express 20(3) 2824-2831 (2012)

Review of photo response in semiconductor transition metal dichalcogenides based photosensitive devices

Qinsheng Wang, Jiawei Lai, and Dong Sun
Opt. Mater. Express 6(7) 2313-2327 (2016)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.