Electrophysical phenomena accompanying femtosecond impacts of laser radiation on semiconductors
Journal of Optical Technology, Vol. 78, Issue 2, pp. 88-92 (2011)
http://dx.doi.org/10.1364/JOT.78.000088
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Abstract
The space–time concentration distribution of nonequilibrium charge carriers is numerically modelled under the action of ultrashort laser radiation pulses on semiconductors, taking into account the external emission of electrons. The results are compared with the experimental conditions for the excitation and propagation of waveguide modes in silicon under the action of femtosecond pulses with a quantum energy of about 0.98 eV.
© 2011 OSA
History
Original Manuscript: June 25, 2010
Published: March 5, 2011
Citation
R. V. Dyukin, G. A. Martsinovskiĭ, G. D. Shandybina, and E. B. Yakovlev, "Electrophysical phenomena accompanying femtosecond impacts of laser radiation on semiconductors," J. Opt. Technol. 78, 88-92 (2011)
http://www.opticsinfobase.org/jot/abstract.cfm?URI=jot-78-2-88
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