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Journal of Optical Technology

Journal of Optical Technology

| SIMULTANEOUS RUSSIAN-ENGLISH PUBLICATION

  • Vol. 80, Iss. 7 — Jul. 1, 2013
  • pp: 421–425

Luminescence properties of porous silicon

D. T. Yan  »View Author Affiliations


Journal of Optical Technology, Vol. 80, Issue 7, pp. 421-425 (2013)
http://dx.doi.org/10.1364/JOT.80.000421


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Abstract

This paper discusses the luminescence properties of anodized porous silicon with various degrees of oxidation. The effect of laser excitation and photostimulated anodization on the photoluminescence intensity of porous silicon is considered. A model is proposed for photoluminescence in porous silicon.

© 2013 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics

History
Original Manuscript: March 27, 2013
Published: July 5, 2013

Citation
D. T. Yan, "Luminescence properties of porous silicon," J. Opt. Technol. 80, 421-425 (2013)
http://www.opticsinfobase.org/jot/abstract.cfm?URI=jot-80-7-421


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References

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