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Journal of Optical Technology


  • Vol. 80, Iss. 7 — Jul. 1, 2013
  • pp: 421–425

Luminescence properties of porous silicon

D. T. Yan  »View Author Affiliations

Journal of Optical Technology, Vol. 80, Issue 7, pp. 421-425 (2013)

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This paper discusses the luminescence properties of anodized porous silicon with various degrees of oxidation. The effect of laser excitation and photostimulated anodization on the photoluminescence intensity of porous silicon is considered. A model is proposed for photoluminescence in porous silicon.

© 2013 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics

Original Manuscript: March 27, 2013
Published: July 5, 2013

D. T. Yan, "Luminescence properties of porous silicon," J. Opt. Technol. 80, 421-425 (2013)

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  15. D. T.  Yan, “How laser excitation affects the photoluminescence of anodized porous silicon,” Opt. Zh. 77, No. 8, 67 (2010) [J. Opt. Technol. 77, 515 (2010)].

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