Abstract

This paper discusses the spectral response of silicon p ? n junctions with a thin film of porous silicon on the surface. It is established that the spectral sensitivity becomes several times as great in the short-wavelength region of the visible spectrum. The observed effect is explained by the reduction in the number of active centers in the near-surface layer of single-crystal silicon that occurs during electrochemical anodization of single-crystal silicon.

Photoluminescence from n-type porous silicon layer enhanced by a forward-biased np-junction

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Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

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Electrical characteristics and photocurrent spectral response of Si nanowires p-i-n junctions

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High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter

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