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Journal of Optical Technology

Journal of Optical Technology


  • Vol. 70, Iss. 9 — Sep. 1, 2003
  • pp: 665–668

Mechanism for forming the red emission band of ZnSe scintillation crystals

V. P. Makhnii and I. V. Tkachenko

Journal of Optical Technology, Vol. 70, Issue 9, pp. 665-668 (2003)

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This paper describes the results of studies of the luminescence properties of ZnSe crystals containing the isovalent impurity Te. Taking into account defect-formation mechanisms in combination with modulation-spectroscopy methods made it possible to determine the conditions under which recombination processes via local deep levels or donor-acceptor pairs are dominant.

V. P. Makhnii and I. V. Tkachenko, "Mechanism for forming the red emission band of ZnSe scintillation crystals," J. Opt. Technol. 70, 665-668 (2003)

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