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Journal of Optical Technology

Journal of Optical Technology

| SIMULTANEOUS RUSSIAN-ENGLISH PUBLICATION

  • Vol. 72, Iss. 6 — Jun. 1, 2005
  • pp: 474–479

Infrared photodetector modules based on variband layers of HgCdTe and on structures with GaAs/AlGaAs quantum wells

V. V. Vasil'ev, V. N. Ovsyuk, V. V. Shashkin, and A. L. Aseev  »View Author Affiliations


Journal of Optical Technology, Vol. 72, Issue 6, pp. 474-479 (2005)
http://dx.doi.org/10.1364/JOT.72.000474


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Abstract

A process has been developed for producing linear and two-dimensional array-type photodetector modules (PDMs), including the fabrication of photodetector structures based on heteroepitaxial layers of CdxHg1−xTe and GaAs/AlGaAs grown by molecular-beam epitaxy, fabrication of two-dimensional and linear arrays of silicon multiplexers, and hybrid assembly of PDMs consisting of a photodetector structure and a multiplexer by means of indium microposts. The photoelectric parameters are given for two-dimensional and linear array-type PDMs based on photodiodes for the mid-IR (3-5.5 µm) and far-IR (8-12 µm) regions, operating at temperatures of 78-80 K and 200-220 K. © 2005 Optical Society of America

Citation
V. V. Vasil'ev, V. N. Ovsyuk, V. V. Shashkin, and A. L. Aseev, "Infrared photodetector modules based on variband layers of HgCdTe and on structures with GaAs/AlGaAs quantum wells," J. Opt. Technol. 72, 474-479 (2005)
http://www.opticsinfobase.org/jot/abstract.cfm?URI=jot-72-6-474


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