Abstract

Two possible implementations of a technology are proposed and investigated for projection holographic photolithography, based on the use of reflective relief-phase hologram-projectors fabricated on a chalcogenide recording medium and protective masks made from thin films of glassy chalcogenide semiconductor (GCS). One of them includes the use of a protective mask made from chemically developed GCS, which is essentially a negative inorganic photoresist. The second is based on the use of a hologram-projector and two successively placed protective masks, one of which is made from GCS successively developed by methods of chemical and ion etching, while the other is a chromium film that changes its structure during ion-plasma processing.

Chalcogenide phase-change thin films used as grayscale photolithography materials

Rui Wang, Jingsong Wei, and Yongtao Fan
Opt. Express 22(5) 4973-4984 (2014)

Formfactor of a hologram on a chalcogenide glassy semiconductor and azopolymer

S. A. Shoydin, A. Yu. Meshalkin, and M. S. Kovalev
Opt. Mater. Express 10(8) 1819-1825 (2020)

Lead-based chalcogenide thin films for mid-IR photoreceivers: plasma synthesis, semiconductor, and optical properties

Leonid Mochalov, Alexander Logunov, Mikhail Kudryashov, Yuliya Kudryashova, Maksim Vshivtsev, and Vladimir Malyshev
Opt. Mater. Express 12(4) 1741-1753 (2022)

Properties of (Se,S)-based chalcogenide glass films, and an application to a holographic supermicrofiche

Sakae Zembutsu, Yoshio Toyoshima, Takeo Igo, and Haruo Nagai
Appl. Opt. 14(12) 3073-3077 (1975)

Thin-film interference effects in photolithography for finite numerical apertures

Douglas A. Bernard and H. Paul Urbach
J. Opt. Soc. Am. A 8(1) 123-133 (1991)