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Journal of Optical Technology

Journal of Optical Technology

| SIMULTANEOUS RUSSIAN-ENGLISH PUBLICATION

  • Vol. 75, Iss. 9 — Sep. 1, 2008
  • pp: 608–610

Features of semiconductor materials as infrared optical media

N. I. Astaf'ev, I. M. Nesmelova, and E. A. Nesmelov  »View Author Affiliations


Journal of Optical Technology, Vol. 75, Issue 9, pp. 608-610 (2008)
http://dx.doi.org/10.1364/JOT.75.000608


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Abstract

This paper discusses features of the electrophysical properties of semiconductors as applied to their use as an optical medium for IR systems. It is shown that reliable information on the absorption coefficient in the IR region can be obtained from a collection of parameters: the conductivity type, resistivity, charge-carrier mobility, and band gap.

© 2008 Optical Society of America

Citation
N. I. Astaf'ev, I. M. Nesmelova, and E. A. Nesmelov, "Features of semiconductor materials as infrared optical media," J. Opt. Technol. 75, 608-610 (2008)
http://www.opticsinfobase.org/jot/abstract.cfm?URI=jot-75-9-608


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References

  1. T. S. Moss, Optical Properties of Semiconductors, rev. ed. (Butterworths, London, 1961; Inostr. Lit., Moscow, 1967).
  2. I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, “Resistivity dependence of the absorption coefficient of crystalline germanium in the IR region,” Opt. Zh. 74, No. 1, 88 (2007) I. M. Nesmelova, N. I. Astaf'ev, and E. A. Nesmelov, [J. Opt. Technol. 74, 88 (2007)].
  3. E. M. Gavrishchuk, “Polycrystalline ZnSe for IR optics,” Neorg. Mater. 39, 1031 (2003).
  4. N. P. Harrick, “Measuring the lifetime of excess current carriers in semiconductors,” in Current-Carrier Recombination in Semiconductors, ed. V.A.Bonch-Bruevich (Inostr. Lit., Moscow, 1959).
  5. Y. Toyoda, L. R. Elias, and W. M. Yen, “Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6μm,” Appl. Opt. 46, 785 (2007). [CrossRef]
  6. J. S. Blakemore, Semiconductor Statistics, (Pergamon Press, Oxford, 1962; Mir, Moscow, 1964).
  7. R. H. Bube, Photoconductivity of Solids (Wiley, New York, 1960; Inostr. Lit., Moscow, 1962).
  8. N. F. Kovtonyuk and R. A. Kontsevoĭ, Measuring the Parameters of Semiconductor Materials (Metallurgiya, Moscow, 1970).
  9. I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shaĭovich, “Measuring the light-attenuation coefficients of germanium and paratellurite crystals,” Opt. Zh. 72, No. 7, 76 (2005) I. A. Kaplunov, A. I. Kolesnikov, I. V. Talyzin, L. Z. Sedova, and S. L. Shĭovich, [J. Opt. Technol. 72, 564 (2005)].
  10. G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, “Optical crystals and polycrystals,” Opt. Zh. No. 11, 77 (1993) G. T. Petrovskiĭ, S. N. Borozdin, M. V. Mal'tsev, I. A. Mironov, M. I. Musatov, V. A. Pis'mennyĭ, and A. V. Shatilov, [J. Opt. Technol. 60, 802 (1993)].
  11. E. M. Gavrishchuk and É. V. Yashina, “Zinc sulfide and zinc selenide optical elements for IR engineering,” Opt. Zh. 71, No. 12, 24 (2004) E. M. Gavrishchuk and É. V. Yashina,J. Opt. Technol. 71, 822 (2004).

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