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Journal of Optical Technology

Journal of Optical Technology

| SIMULTANEOUS RUSSIAN-ENGLISH PUBLICATION

  • Vol. 75, Iss. 9 — Sep. 1, 2008
  • pp: 608–610

Features of semiconductor materials as infrared optical media

N. I. Astaf'ev, I. M. Nesmelova, and E. A. Nesmelov  »View Author Affiliations


Journal of Optical Technology, Vol. 75, Issue 9, pp. 608-610 (2008)
http://dx.doi.org/10.1364/JOT.75.000608


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Abstract

This paper discusses features of the electrophysical properties of semiconductors as applied to their use as an optical medium for IR systems. It is shown that reliable information on the absorption coefficient in the IR region can be obtained from a collection of parameters: the conductivity type, resistivity, charge-carrier mobility, and band gap.

© 2008 Optical Society of America

Citation
N. I. Astaf'ev, I. M. Nesmelova, and E. A. Nesmelov, "Features of semiconductor materials as infrared optical media," J. Opt. Technol. 75, 608-610 (2008)
http://www.opticsinfobase.org/jot/abstract.cfm?URI=jot-75-9-608

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