Abstract

This paper presents a comparison of the dark currents and differential resistance of photodiodes, obtained using p-type cadmium-mercury telluride (CdHgTe) layers doped with boron ions, grown by molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE). The volt-ampere responses for diodes on CdHgTe layers with composition x=0.215, grown by MBE and LPE (x≈0.222) are characterized by various saturation currents (reverse bias −0.25V) of 1-2 and 5-10nA, even though the band gap is greater for the latter. In this case, the maximum differential resistance is 4×10⁹ and 5×10⁷Ω for diodes based on MBE and LPE layers, respectively. The experimental data are compared with the calculated values. Numerical modelling showed that, for MBE structures with low biases, the dark current is limited by the diffusion current and by the Shockley-Read-Hall current outside the n-p junction, whereas, in LPE structures, there is a substantial contribution of currents through traps in the depletion region.

© 2009 Optical Society of America

Surface leakage current in 12.5  μm long-wavelength HgCdTe infrared photodiode arrays

Weicheng Qiu, Weida Hu, Chun Lin, Xiaoshuang Chen, and Wei Lu
Opt. Lett. 41(4) 828-831 (2016)

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy

Michele Natrella, Efthymios Rouvalis, Chin-Pang Liu, Huiyun Liu, Cyril C. Renaud, and Alwyn J. Seeds
Opt. Express 20(17) 19279-19288 (2012)

High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

Xiaoli Lin, Michele Natrella, James Seddon, Chris Graham, Cyril C. Renaud, Mingchu Tang, Jiang Wu, Huiyun Liu, and Alwyn J. Seeds
Opt. Express 27(25) 37065-37086 (2019)

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact

Benjamin P. Yonkee, Erin C. Young, Changmin Lee, John T. Leonard, Steven P. DenBaars, James S. Speck, and Shuji Nakamura
Opt. Express 24(7) 7816-7822 (2016)

Performance prediction of p-i-n HgCdTe long-wavelength infrared HOT photodiodes

Antoni Rogalski, Małgorzata Kopytko, and Piotr Martyniuk
Appl. Opt. 57(18) D11-D19 (2018)