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Efficient electrooptic modulator for a laser beam reflected from the p–n junction of a germanium transistor

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Abstract

This paper presents the response of an electrooptic modulator in the tonal region of frequencies for radiation reflected from the p-n junction of a germanium transistor that operates in the amplification regime. The modulator can be effectively used in fiber-optic communication, optical devices for quantum electronics, and devices for the recording, storage, and processing of optical information.

© 2009 Optical Society of America

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