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Journal of Optical Technology

Journal of Optical Technology


  • Vol. 76, Iss. 8 — Aug. 1, 2009
  • pp: 511–515

Experimental study of how the photosensitive elements of optoelectronic devices react to pulsed illumination

A. G. Bedrin, I. S. Mironov, and P. N. Rogovtsev  »View Author Affiliations

Journal of Optical Technology, Vol. 76, Issue 8, pp. 511-515 (2009)

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This paper presents the results of a study of how pulsed radiation with a continuous spectrum created by a plasma light source based on magnetostriction discharge acts on the photosensitive elements of optoelectronic devices. The threshold values of the energy exposure are determined that cause a reduction of the photocurrent of a silicon element of a solar battery, reversible changes of the sensitivity of a silicon photodiode, and reversible changes of the sensitivity and resolving power of a silicon photodetector array with charge accumulation.

© 2009 Optical Society of America

A. G. Bedrin, I. S. Mironov, and P. N. Rogovtsev, "Experimental study of how the photosensitive elements of optoelectronic devices react to pulsed illumination," J. Opt. Technol. 76, 511-515 (2009)

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