Abstract

A theoretical analysis of how the permittivity of a broad-band semiconductor varies while it is being acted on by a femtosecond laser pulse is presented, taking into account various types of emission phenomena. The spatial permittivity distribution considered here is modelled experimentally, using surface plasmon resonance on the corresponding multilayer structures and is compared with the data of femtosecond microstructuring of silicon at a wavelength of 1.25 µm.

© 2011 OSA

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