Controlling the accumulation regime in solid-state photodetectors
Journal of Optical Technology, Vol. 79, Issue 11, pp. 738-743 (2012)
http://dx.doi.org/10.1364/JOT.79.000738
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Abstract
Methods of controlling the charge-accumulation regime in photodetector arrays have been classified. Differences in methods of controlling accumulation in CCDs and in CMOS structures are considered. A method for adapting the accumulation to the dynamics of the subject and a method for controlling the duration and phase of the accumulation when a distance is measured in a solid-state array system with active pulse illumination are proposed.
© 2012 OSA
History
Original Manuscript: June 18, 2012
Published: November 30, 2012
Citation
A. A. Mantsvetov, A. A. Umbitaliev, V. V. Kozlov, A. K. Tsytsulin, A. E. Rychazhnikov, P. S. Baranov, and A. V. Ivanova, "Controlling the accumulation regime in solid-state photodetectors," J. Opt. Technol. 79, 738-743 (2012)
http://www.opticsinfobase.org/jot/abstract.cfm?URI=jot-79-11-738
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