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Journal of Optical Technology

Journal of Optical Technology

| SIMULTANEOUS RUSSIAN-ENGLISH PUBLICATION

  • Vol. 79, Iss. 3 — Mar. 1, 2012
  • pp: 191–193

The optical properties of single-crystal silicon in the 3–5-µm region

I. M. Nesmelova, N. I. Astaf’ev, and N. A. Kulakova  »View Author Affiliations


Journal of Optical Technology, Vol. 79, Issue 3, pp. 191-193 (2012)
http://dx.doi.org/10.1364/JOT.79.000191


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Abstract

This paper discusses features of radiation absorption in the spectral region from 3 to 5 µm by single-crystal silicon: the dependence of the absorption coefficient on resistivity in samples of n- and p-type conductivity, the additional absorption associated with intraband electron transitions in the conduction band, and the influence of short-wavelength illumination on the transmission spectra. Recommendations for the use of silicon as an optical medium are given from an analysis of the calculated and experimental data.

© 2012 OSA

History
Original Manuscript: November 22, 2011
Published: March 30, 2012

Citation
I. M. Nesmelova, N. I. Astaf’ev, and N. A. Kulakova, "The optical properties of single-crystal silicon in the 3–5-µm region," J. Opt. Technol. 79, 191-193 (2012)
http://www.opticsinfobase.org/jot/abstract.cfm?URI=jot-79-3-191

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