This paper discusses features of radiation absorption in the spectral region from 3 to 5 µm by single-crystal silicon: the dependence of the absorption coefficient on resistivity in samples of n- and p-type conductivity, the additional absorption associated with intraband electron transitions in the conduction band, and the influence of short-wavelength illumination on the transmission spectra. Recommendations for the use of silicon as an optical medium are given from an analysis of the calculated and experimental data.
© 2012 OSA
Original Manuscript: November 22, 2011
Published: March 30, 2012
I. M. Nesmelova, N. I. Astaf’ev, and N. A. Kulakova, "The optical properties of single-crystal silicon in the 3–5-µm region," J. Opt. Technol. 79, 191-193 (2012)