This paper discusses the luminescence properties of anodized porous silicon with various degrees of oxidation. The effect of laser excitation and photostimulated anodization on the photoluminescence intensity of porous silicon is considered. A model is proposed for photoluminescence in porous silicon.
© 2013 Optical Society of America
(250.0250) Optoelectronics : Optoelectronics
Original Manuscript: March 27, 2013
Published: July 5, 2013
D. T. Yan, "Luminescence properties of porous silicon," J. Opt. Technol. 80, 421-425 (2013)