Foreword from the editor of this issue

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 737–738 (2009)
• V. B. Shlishevskii

Microbolometer detector arrays for the infrared and terahertz ranges

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 739–743 (2009)
• M. A. Dem'yanenko, D. G. Esaev, V. N. Ovsyuk, B. I. Fomin, A. L. Aseev, B. A. Knyazev, G. N. Kulipanov, and N. A. Vinokurov

Injection-type photodetector arrays based on doped lead-tin tellurides: Possibilities and prospects

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 744–749 (2009)
• A. É. Klimov and V. N. Shumskii

A family of large-format linear photosensitive charge-coupled devices with resolution 38.5 line pairs/mm

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 750–754 (2009)
• E. V. Kostyukov, A. M. Maklakov, and A. S. Skrylev

Long-wavelength infrared photodetector with an analog time-delay-and-storage regime

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 755–756 (2009)
• Yu. I. Zavadskii, A. S. Skrylev, B. M. Khotyanov, and V. V. Chernokozhin

Linear 288×4-format photodetector with a bidirectional time-delay-and-storage regime

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 757–761 (2009)
• V. V. Vasil'ev, A. V. Predein, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, V. P. Reva, I. V. Sabinina, Yu. G. Sidorov, A. O. Suslyakov, A. L. Aseev, and F. F. Sizov

320×256 photodetector arrays with a built-in short-wavelength cutoff filter

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 762–766 (2009)
• V. V. Vasil'ev, V. S. Varavin, S. A. Dvoretsii, I. V. Marchishin, N. N. Mikhailov, A. V. Predein, V. G. Remesnik, I. V. Sabinina, Yu. G. Sidorov, and A. O. Suslyakov

Comparison of the current characteristics of photodiodes formed on CdHgTe films grown by molecular-beam and liquid-phase epitaxy for the 8-12-μm spectral range

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 767–772 (2009)
• E. V. Andreeva, Zh. V. Gumenyuk-Sychevskaya, Z. F. Tsibrii, F. F. Sizov, V. S. Varavin, V. V. Vasil'ev, S. A. Dvoretskii, and N. N. Mikhailov

Long-term stability of photoresistors for the spectral range 8-12μm, fabricated from heteroepitaxial CdHgTe structures obtained by molecular-beam epitaxy

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 773–776 (2009)
• A. V. Filatov, E. V. Susov, A. V. Gusarov, N. M. Akimova, V. V. Krapukhin, V. V. Karpov, and V. I. Shaevich

Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 777–782 (2009)
• M. V. Yakushev, V. V. Vasil'ev, S. A. Dvoretskii, A. I. Kozlov, A. R. Novoselov, Yu. G. Sidorov, B. I. Fomin, A. L. Aseev, and E. V. Degtyarev

A technology for assembling large-format infrared photodetector modules on indium microposts

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 783–786 (2009)
• A. G. Klimenko, T. N. Nedosekina, N. V. Karnaeva, I. V. Marchishin, A. R. Novoselov, V. N. Ovsyuk, and D. G. Esaev

CdHgTe-based nanostructures for photodetectors

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 787–790 (2009)
• S. A. Dvoretskii, Z. D. Kvon, N. N. Mikhailov, V. A. Shvets, A. L. Aseev, B. Wittmann, S. N. Danilov, and S. D. Ganichev

Materials for photodetectors based on intersubband transitions in GaN/AlGaN quantum dots

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 791–798 (2009)
• K. S. Zhuravlev, V. G. Mansurov, S. N. Grinyaev, G. F. Karavaev, and P. Tronc

Method of forming a unified information field in an observational device

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 799–801 (2009)
• V. A. Voitov, A. V. Golitsyn, P. V. Zhuravlev, G. E. Zhurov, E. V. Degtyarev, and V. B. Shlishevskii

Using segmentation to automate the interpretation of multispectral images

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• Journal of Optical Technology, Vol. 76, Iss. 12, pp. 802–807 (2009)
• R. M. Aleev and V. B. Fofanov