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Optics Express

| THE INTERNATIONAL ELECTRONIC JOURNAL

  • Editor: Micha
  • Vol. 13, Iss. 23 — Nov. 14, 2005
  • pp: 9460–9464

Optics InfoBase > Optics Express > Volume 13 > Issue 23 > Page 9460

Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells

Hyundai Park, Alexander Fang, Satoshi Kodama, and John Bowers

Optics Express, Vol. 13, Issue 23, pp. 9460-9464        doi:10.1364/OPEX.13.009460

» View Full Text: Acrobat PDF (132 KB)

  • OCIS Codes:
  • (140.5960) Lasers and laser optics : Semiconductor lasers
  • (250.5300) Optoelectronics : Photonic integrated circuits

Citation
Hyundai Park, Alexander Fang, Satoshi Kodama, and John Bowers, "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Express 13, 9460-9464 (2005)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-13-23-9460

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Abstract

A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW.

© 2005 Optical Society of America

» View Full Text: Acrobat PDF (132 KB)

History
Original Manuscript: October 18, 2005
Revised Manuscript: November 4, 2005
Published: November 14, 2005

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