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Raman amplification in ultrasmall silicon-on-insulator wire waveguides

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Abstract

We measure stimulated Raman gain at 1550 nm in an ultrasmall SOI strip waveguide, cross-section of 0.098 µm2. We obtain signal amplification of up to 0.7 dB in the counter-propagating configuration for a sample length of 4.2 mm and using a diode pump at 1435 nm with powers of <30 mW. The Raman amplifier has a figure-of-merit (FOM) of 57.47 dB/cm/W. This work shows the feasibility of ultrasmall SOI waveguides for the development of SOI-based on-chip optical amplifiers and active photonic integrated circuits.

©2004 Optical Society of America

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Figures (4)

Fig. 1.
Fig. 1. Optical and SEM micrographs of fabricated SOI devices. (a)Waveguides of varying lengths. (b) Zoom of polymer taper spot-size converter. (c) SEM of polymer with inverted silicon taper tip
Fig. 2.
Fig. 2. Experimental setup for measuring stimulated Raman gain in SOI waveguides.
Fig. 3.
Fig. 3. Stimulated (a) and spontaneous (b) Raman emission spectra with high-bandwidth OSA detection for SOI waveguides.
Fig. 4.
Fig. 4. On-Off gain versus input pump power. The maximum gain is 0.7 dB (17%) with a pump power of ~29 mW. A linear fit with a slope of 0.029 dB/mW corresponds to an SRS coefficient, gR~29 cm/GW.

Equations (2)

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d P P ( z ) dz = ν p ν R g R P P ( z ) P R ( z ) α P P ( z ) ( β A eff ) P P ( z ) 2
d P R ( z ) dz = α P R ( z ) ( g R β A eff ) P R ( z ) P P ( z )
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