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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 18 — Sep. 6, 2004
  • pp: 4261–4268

Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering

Ansheng Liu, Haisheng Rong, Mario Paniccia, Oded Cohen, and Dani Hak  »View Author Affiliations

Optics Express, Vol. 12, Issue 18, pp. 4261-4268 (2004)

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We observe for the first time net optical gain in a low loss silicon waveguide in silicon-on-insulator (SOI) based on stimulated Raman scattering with a pulsed pump laser at 1.545 μm. We show that pulsed pumping with a pulse width narrower than the carrier recombination lifetime in SOI significantly reduces the free carrier generation rate due to two-photon absorption (TPA) in silicon. For a 4.8 cm long waveguide with an effective core area of ~1.57 μm2, we obtained a net gain of 2 dB with a pump pulse width of ~17 ns and a peak pump power of ~470 mW inside the waveguide.

© 2004 Optical Society of America

OCIS Codes
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(230.4320) Optical devices : Nonlinear optical devices
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits
(290.5860) Scattering : Scattering, Raman

ToC Category:
Research Papers

Original Manuscript: August 2, 2004
Revised Manuscript: August 26, 2004
Published: September 6, 2004

Ansheng Liu, Haisheng Rong, Mario Paniccia, Oded Cohen, and Dani Hak, "Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering," Opt. Express 12, 4261-4268 (2004)

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