Abstract

We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.

© 2004 Optical Society of America

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History
Original Manuscript: September 23, 2004
Revised Manuscript: October 12, 2004
Published: October 18, 2004

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Author Affiliations

Ozdal Boyraz, Bahram Jalali

University of California, Los Angeles

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