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Improvement to reflective dielectric film color pictures

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Abstract

This paper presents methods used to improve reflective dielectric film color pictures. These changes include improvements in color purity, increased brightness, and elimination of any light absorption within the film layers. The color picture is fabricated by varying the silicon dioxide film thicknesses across a silicon wafer and coating the entire wafer with a thin layer of silicon nitride. In addition to the demonstration of fabricated color pictures, we also present more detailed calculation of basis colors and provide details of the fabrication process.

©2004 Optical Society of America

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Figures (8)

Fig. 1.
Fig. 1. Illustration of light interaction with a thin-film system.
Fig. 2.
Fig. 2. Reflectance plot R(λ) for an oxide depth of 360 nm with 5 thicknesses of nitride coating ranging from no nitride up to 80nm of nitride..
Fig. 3.
Fig. 3. Colors produced by a thin layer of silicon dioxide as a function of thickness both (a) without and (b) with a 60nm thick layer of silicon nitride.
Fig. 4.
Fig. 4. (a) The fraction of the power reflected, and (b) the color as a function of film thickness for a silicon nitride film on silicon at a viewing angle of 18°.
Fig. 5.
Fig. 5. Pixel layout.
Fig. 6.
Fig. 6. (a) The RGB parameters as a function of oxide thickness without a silicon nitride layer and (b) with a 60nm thick layer of silicon nitride, where the actual basis colors are shown.
Fig. 7.
Fig. 7. Illustration of the basic fabrication process.
Fig. 8.
Fig. 8. Dielectric color pictures fabricated with (a) just silicon dioxide on silicon and (b) silicon dioxide and silicon nitride on silicon.

Tables (1)

Tables Icon

Table 1. Example of area calculations to produce the colors shown in Fig. 5(a).

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