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Net continuous wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering

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Abstract

We observe for the first time net continuous wave optical gain in a low loss silicon-on-insulator waveguide based on stimulated Raman scattering. We show that nonlinear optical loss due to two-photon absorption induced free carrier absorption can be significantly reduced by introducing a reverse biased p-i-n diode in the waveguide. For a 4.8 cm long waveguide with an effective core area of ~1.6 µm2, we obtain a net CW Raman gain of >3dB with a pump power of ~700mW inside the waveguide.

©2005 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. Schematic diagram of the SOI p-i-n waveguide used in our experiment.
Fig. 2.
Fig. 2. Measured and modeled output power as a function of the input power for a 4.8 cm long waveguide containing a reverse biased p-i-n diode with various bias voltages. Symbols represent the experimental data and curves are the modeled results. The carrier lifetime is used as a fitting parameter for each bias voltage.
Fig. 3.
Fig. 3. Experimental setup of CW gain measurement, DUT is device under test
Fig. 4.
Fig. 4. Net Raman gain for a p-i-n diode embedded in a silicon waveguide as a function of the pump intensity for a 4.8 cm long silicon waveguide at different bias voltages. Symbols represent the experimental results and solid curve is the modeling result. The Raman gain coefficient used in the simulation is gr =9.5 cm/GW.
Fig. 5.
Fig. 5. Net Raman gain as a function of the pump wavelength for a 4.8 cm long silicon waveguide. The pump power is 511 mW, the probe wavelength is 1684 nm, and the reverse bias on the p-i-n is 25 V.

Equations (4)

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N ( z ) = τ β 2 hv P 2 ( z ) A eff 2
dP ( z ) dz = αP ( z ) β A eff P 2 ( z ) σN ( z ) P ( z )
dP s ( z ) dz = α P s ( z ) 2 β g r A eff P ( z ) P s ( z ) σ N ( z ) P s ( z )
G = 10 log P s ( L ) P s ( 0 )
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