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Single-mode Ag-As2Se3 strip-loaded waveguides for applications to all-optical devices

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Abstract

We report the fabrication and characterization of Ag-As2Se3 strip-loaded waveguides fabricated by the standard lift-off method and photodoping, where Ag-As2Se3 (i.e., Agx(As0.4Se0.6)100-x) is a very promising material for all-optical switching devices because of a high third-order optical nonlinearity. Absorption coefficient of the bulk glasses is also presented for different values of the Ag content x. The addition of Ag into an As2Se3 guiding layer increases its nonlinearity and eliminates or weakens a harmful photo-oxidation reaction of As2Se3 films. The measured propagation loss in the single-mode waveguides with the Ag content x=3 at.% was 0.5 dB/cm at a wavelength of 1.053 μm and was attributable to the absorption loss in the waveguide materials.

©2005 Optical Society of America

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Figures (6)

Fig. 1.
Fig. 1. Absorption coefficient α of Agx(As0.4Se0.6)100-x bulk glasses as a function of wavelength λ. (a) Ag content x=0-4 at.% , (b) x=15-30 at.%. The absorption loss in dB/cm is given by 4.343 α
Fig. 2.
Fig. 2. Fabrication process of the strip-loaded waveguides and its cross section.
Fig. 3.
Fig. 3. SEM images of (a) the end-face of a cleaved strip-loaded waveguide and (b) top view of the same waveguide.
Fig. 4.
Fig. 4. IR image of a characteristic streak of the scattered light from a strip-loaded waveguide with w=3.0 μm.
Fig. 5.
Fig. 5. (a) Observed near-field profile from a strip-loaded waveguide with d=1.2, w=3.0 and h=0.1 μm and (b) calculated intensity profile of the E11y mode using a finite-element method.
Fig. 6.
Fig. 6. Dependence of the relative scattered intensity (in dB) on distance along the waveguide for two values of the strip width w. The straight lines represent best fits to the experimental data. Note that the difference in the scattered intensity between two waveguides has no meaning.

Equations (1)

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α = 1 d ln [ ( 1 R ) 2 T ]
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