Abstract

A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW.

© 2005 Optical Society of America

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History
Original Manuscript: October 18, 2005
Revised Manuscript: November 4, 2005
Published: November 14, 2005

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Author Affiliations

Hyundai Park, Alexander Fang, Satoshi Kodama, John Bowers

University of California Santa Barbara

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