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Lossless optical modulation in a silicon waveguide using stimulated Raman scattering

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Abstract

In this paper we describe a new modulation scheme using stimulated Raman scattering in conjunction with a reverse biased p-i-n diode embedded in a silicon waveguide. We show optical modulation of a weak probe beam by modulating the reverse bias voltage of the silicon waveguide excited by a strong pump beam. The probe beam modulation is due to the two-photon absorption-induced carrier density modulation in the waveguide. By tuning the probe wavelength to the Stokes wavelength, we demonstrate for the first time a lossless optical modulator in silicon with modulation speeds up to 80-MHz.

©2005 Optical Society of America

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Figures (8)

Fig. 1. (a)
Fig. 1. (a) Schematic diagram of the SOI p-i-n waveguide used in our experiment.
Fig. 1. (b)
Fig. 1. (b) SEM image of the SOI p-i-n waveguide used in our experiment.
Fig. 2.
Fig. 2. Experimental setup used to make the gain measurement. DUT is device under test, TEC is thermo-electric cooler
Fig. 3.
Fig. 3. Net Raman gain as a function of reverse bias for different pump powers coupled into the silicon waveguide, error bars display the standard deviation
Fig. 4.
Fig. 4. Modeled carrier density in our silicon waveguide device at different pump powers as a function of bias voltage
Fig. 5.
Fig. 5. Demonstration of lossless silicon modulator for a pump power of 954-mW inside our device and 10-MHz square wave drive voltage
Fig. 6. (a)
Fig. 6. (a) The on-chip voltage and optical modulation as a function of frequency for a pump power of 579-mW inside a d=6-um waveguide; error bars display the standard deviation
Fig. 6. (b)
Fig. 6. (b) Normalized frequency plot for a pump power of 579-mW inside a d=6-um S-bend waveguide

Tables (1)

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Table 1. DC current, Transmission loss, Modulation depth and 3-dB Bandwidth for this silicon modulator for various pump powers and drive voltages

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

G = 10 log P s ( L ) P s ( 0 )
ζ = β 2 h ν P 2 A eff 2
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