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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 13, Iss. 5 — Mar. 7, 2005
  • pp: 1716–1723

Lossless optical modulation in a silicon waveguide using stimulated Raman scattering

Richard Jones, Ansheng Liu, Haisheng Rong, Mario Paniccia, Oded Cohen, and Dani Hak  »View Author Affiliations

Optics Express, Vol. 13, Issue 5, pp. 1716-1723 (2005)

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In this paper we describe a new modulation scheme using stimulated Raman scattering in conjunction with a reverse biased p-i-n diode embedded in a silicon waveguide. We show optical modulation of a weak probe beam by modulating the reverse bias voltage of the silicon waveguide excited by a strong pump beam. The probe beam modulation is due to the two-photon absorption-induced carrier density modulation in the waveguide. By tuning the probe wavelength to the Stokes wavelength, we demonstrate for the first time a lossless optical modulator in silicon with modulation speeds up to 80-MHz.

© 2005 Optical Society of America

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(190.5650) Nonlinear optics : Raman effect
(230.4320) Optical devices : Nonlinear optical devices
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Research Papers

Original Manuscript: February 8, 2005
Revised Manuscript: February 25, 2005
Published: March 7, 2005

Richard Jones, Ansheng Liu, Haisheng Rong, Mario Paniccia, Oded Cohen, and Dani Hak, "Lossless optical modulation in a silicon waveguide using stimulated Raman scattering," Opt. Express 13, 1716-1723 (2005)

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