Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module

S. C. Mao; S. H. Tao; Y. L. Xu; X. W. Sun; M. B. Yu; G. Q. Lo; D. L. Kwong

doi:10.1364/OE.16.020809

Optics Express
Vol. 16,
Issue 25,
pp. 20809-20816
(2008)
•https://doi.org/10.1364/OE.16.020809

Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module

S. C. Mao, S. H. Tao, Y. L. Xu, X. W. Sun, M. B. Yu, G. Q. Lo, and D. L. Kwong

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S. C. Mao, S. H. Tao, Y. L. Xu, X. W. Sun, M. B. Yu, G. Q. Lo, and D. L. Kwong, "Low propagation loss SiN optical waveguide prepared by optimal low-hydrogen module," Opt. Express 16, 20809-20816 (2008)

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Abstract

We investigated low-hydrogen SiN films prepared by a low temperature (350 °C) PECVD method. The impact of SiH4/N2 flow ratio and radio frequency power on the hydrogen content in the SiN films was studied. In this work, we demonstrated a low-loss sub-micron SiN waveguide by using the corresponding optimal SiN films. The propagation loss was found to be as low as -2.1±0.2 dB/cm at 1550nm with waveguide cross-section of 700nm×400nm. The results suggest that the SiN films grown by PECVD with low hydrogen can be used in photonics integrated circuits for new generation communications applications.

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Fig. 1. AFM picture of the surface of the deposited SiO₂ layer before and after CMP

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Fig. 2. (a) The schematic structure of the waveguide cross-section; (b) SEM image of the SiN waveguide tip structure; (c) The cut-back pattern of the waveguides.

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Fig. 3. FTIR absorbance spectra of typical and low hydrogen PECVD SiN films

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Fig. 4. FTIR absorption spectra as a function of SiH₄/N₂ flow rates in low hydrogen PECVD. The inset shows the Si-H bond, N-H bond and total hydrogen concentration calculated by using the FITR spectroscopy.

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Fig. 5. FTIR absorption spectra as a function of RF powers, where the SiH₄/N₂ flow rate are 80sccm/4000sccm The inset shows the Si-H bond, N-H bond and total hydrogen concentration calculated by using the FITR spectroscopy.

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Fig. 6. Insertion loss measurements as a function of waveguide length of sample 5, at 1550nm. The propagation loss is calculated as -2.1 ± 0.2 dB/cm.

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Tables (2)

Table I Deposition parameters of SiN films

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Table-II Comparison of SiN Waveguides

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No.	SiH₄:N₂ ratio (sccm:sccm)	RF (W)	refractive index	Dep. rate (Å/s)
1	110:2200	400	2.32	35.8
2	110:3000	400	2.31	32.9
3	110:4000	400	2.30	31.6
4	80:3000	400	2.10	23.1
5	80:4000	400	2.03	22.8
6	70:4000	400M	1.93	19.3
7	80:4000	350	2.19	22.8
8	80:4000	450	1.93	21.5
9	80:4000	500	1.89	21.0

Authors	Waveguide Structure	SiN core Deposition method	Refractive index of SiN	Propagation loss (dB/cm)
Melchiorri et. al. [15]	Channel, alternating SiN/SiO2 layers, 1um×0.5um	LPCVD	~2.19	1.5 (@1550nm)
Philipp et. al. [16]	Channel, 1.2um×0.33um, BOX, Top clad: 10um BPSG	LPCVD	2.06	1.2±0.5 (wavelength not mentioned)
Barwicz et. al.[17]	Channel, 1.05um×0.44um; BOX: 2.54um Top clad: air	LPCVD	2.217	3.6 (wavelength not mentioned)
Daldosso et. al. [18]	Channel, 10um×0.2um Bottom clad: 2um BPSG	LPCVD	~2.0	4.5-5.0 (@1544nm)
This work.	Channel, 0.7um×0.4um BOX: 5um Top clad: 3um SiO2	PECVD	2.03	2.1±0.2 (@1550nm)

No.	SiH₄:N₂ ratio (sccm:sccm)	RF (W)	refractive index	Dep. rate (Å/s)
1	110:2200	400	2.32	35.8
2	110:3000	400	2.31	32.9
3	110:4000	400	2.30	31.6
4	80:3000	400	2.10	23.1
5	80:4000	400	2.03	22.8
6	70:4000	400M	1.93	19.3
7	80:4000	350	2.19	22.8
8	80:4000	450	1.93	21.5
9	80:4000	500	1.89	21.0

Authors	Waveguide Structure	SiN core Deposition method	Refractive index of SiN	Propagation loss (dB/cm)
Melchiorri et. al. [15]	Channel, alternating SiN/SiO2 layers, 1um×0.5um	LPCVD	~2.19	1.5 (@1550nm)
Philipp et. al. [16]	Channel, 1.2um×0.33um, BOX, Top clad: 10um BPSG	LPCVD	2.06	1.2±0.5 (wavelength not mentioned)
Barwicz et. al.[17]	Channel, 1.05um×0.44um; BOX: 2.54um Top clad: air	LPCVD	2.217	3.6 (wavelength not mentioned)
Daldosso et. al. [18]	Channel, 10um×0.2um Bottom clad: 2um BPSG	LPCVD	~2.0	4.5-5.0 (@1544nm)
This work.	Channel, 0.7um×0.4um BOX: 5um Top clad: 3um SiO2	PECVD	2.03	2.1±0.2 (@1550nm)

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