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Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate

Katsuaki Tanabe, Masahiro Nomura, Denis Guimard, Satoshi Iwamoto, and Yasuhiko Arakawa

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Abstract

Room temperature, continuous-wave lasing in a quantum dot photonic crystal nanocavity on a Si substrate has been demonstrated by optical pumping. The laser was an air-bridge structure of a two-dimensional photonic crystal GaAs slab with InAs quantum dots inside on a Si substrate fabricated through wafer bonding and layer transfer. This surface-emitting laser exhibited emission at 1.3 μm with a threshold absorbed power of 2 μW, the lowest out of any type of lasers on silicon.

©2009 Optical Society of America

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Figures (4)
Fig. 1.
Fig. 1. Cross-sectional schematic of the laser device layer structure and fabrication process.

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Fig. 2
Fig. 2 Cross-sectional scanning electron microscope (SEM) image of the air-bridge structure of InAs/GaAs QD - PhC on silicon substrate. (Inset) Plane view of the PhC structure around the cavity.

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Fig. 3.
Fig. 3. (a). Photoluminescence spectrum at 100 μW incident pump power and (b) output optical power dependence on pump power for the lasing photonic crystal nanocavity mode under continuous-wave optical pumping at room temperature. Also shown in the inset of (a) is a photoluminescence spectrum at 30 μW incident pump power for a region of the same InAs/GaAs quantum dot slab but outside the photonic crystal pattern.

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Fig. 4.
Fig. 4. Logarithmic L-L plot of the lasing photonic crystal nanocavity mode under continuous-wave pumping at room temperature. Also plotted is the linewidth dependence on pump power. The dotted lines fitted to the L-L plot are both linear and the solid curve is a fit by the coupled rate model calculation. The dotted lines fitted to the linewidth plot represent the slope at each region.

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Equations (2)

Equations on this page are rendered with MathJax. Learn more.

dN dt = R ex − N τ r − N τ nr − c n eff · Γg ( N ) P ,
dP dt = c n eff · Γg ( N ) P + β N τ r − P τ p ,
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