Hot electrons and curves of constant gain in long wavelength quantum well lasers
Optics Express, Vol. 2, Issue 4, pp. 125-130 doi:10.1364/OE.2.000125
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- OCIS Codes:
- (140.5960) Lasers and laser optics : Semiconductor lasers
- (230.5590) Optical devices : Quantum-well, -wire and -dot devices
Citation
Vera Gorfinkel, Mikhail Kisin, and Serge Luryi, "Hot electrons and curves of constant gain
in long wavelength quantum well lasers," Opt. Express 2, 125-130 (1998)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-2-4-125
Abstract
In long wavelength quantum well lasers the effective electron temperature (Te) is often a strong function of the pump current and hence the Te correlates with the carrier concentration n in the active region. On the other hand, the material gain g in the active layer depends on both variables, g=g(n,Te ). We discuss a convenient way of analyzing this situation, based on considering the contours of constant gain g on the surface g(n,Te ). This is qualitatively illustrated with two model examples involving quantum well lasers, the long-wavelength quantum well laser with current dominated by the Auger recombination and the unipolar quantum cascade laser.
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History
Original Manuscript: November 4, 1997
Published: February 16, 1998
References
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Author Affiliations
State University of New York at Stony Brook
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