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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 24 — Nov. 29, 2004
  • pp: 5962–5967

Electrooptic modulation up to 40 GHz in a barium titanate thin film waveguide modulator

Pingsheng Tang, D. J. Towner, T. Hamano, A. L. Meier, and B. W. Wessels  »View Author Affiliations

Optics Express, Vol. 12, Issue 24, pp. 5962-5967 (2004)

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The high frequency operation of a low-voltage electrooptic modulator based on a strip-loaded BaTiO3 thin film waveguide structure has been demonstrated. The epitaxial BaTiO3 thin film on an MgO substrate forms a composite structure with a low effective dielectric constant of 20.8 at 40 GHz. A 3.9 V half-wave voltage with a 3.7 GHz 3-dB bandwidth and a 150 pm/V effective electrooptic coefficient is obtained for the 3.2mm-long modulator at 1.55 µm. Broadband modulation up to 40 GHz is measured with a calibrated detection system. Numerical simulations indicate that the BaTiO3 thin film modulator has the potential for a 3-dB operational bandwidth in excess of 40 GHz through optimized design.

© 2004 Optical Society of America

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(230.2090) Optical devices : Electro-optical devices
(230.7370) Optical devices : Waveguides
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Research Papers

Original Manuscript: October 29, 2004
Revised Manuscript: November 16, 2004
Published: November 29, 2004

Pingsheng Tang, D. Towner, T. Hamano, A. Meier, and B. Wessels, "Electrooptic modulation up to 40 GHz in a barium titanate thin film waveguide modulator," Opt. Express 12, 5962-5967 (2004)

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