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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 12, Iss. 5 — Mar. 8, 2004
  • pp: 736–741

Origin of power fluctuations in GaN resonant-cavity light-emitting diodes

Brendan Roycroft, Mahbub Akhter, Pleun Maaskant, Brian Corbett, Alan Shaw, Louise Bradley, Phillipe de Mierry, and Marie-Antoinette Poisson  »View Author Affiliations

Optics Express, Vol. 12, Issue 5, pp. 736-741 (2004)

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Resonant-cavity light-emitting diodes (RCLEDs) with multiple InGaN/GaN quantum wells have been grown on sapphire substrates. The emission was through the substrate, and the top contact consisted of a highly reflecting Pd/Ag metallization. The peak emission wavelength was measured to be 490 nm. Under constant current biasing, the intensity was observed to fluctuate irregularly accompanied by correlated variations in the voltage. To investigate this further, emission from the RCLED was focused through a GaAs wafer onto a Vidicon camera. This gave a series of infrared, near-field images, spectrally integrated over a wavelength range from 870 nm to 1.9 µm. Flashes from point sources on the RCLED surface were observed, indicating that short-lived, highly localized “hot spots” were being formed that generated pulses of thermal radiation. It is proposed that this phenomenon results from the migration of metal into nanopipes present in this material. The filled pipes form short circuits that subsequently fuse and are detected by bursts of infrared radiation that are recorded in real time.

© 2004 Optical Society of America

OCIS Codes
(160.3380) Materials : Laser materials
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Research Papers

Original Manuscript: November 19, 2003
Revised Manuscript: February 4, 2004
Published: March 8, 2004

Brendan Roycroft, Mahbub Akhter, Pleun Maaskant, Brian Corbett, Alan Shaw, Louise Bradley, Phillipe de Mierry, and Marie-Antoinette Poisson, "Origin of power fluctuations in GaN resonant-cavity light-emitting diodes," Opt. Express 12, 736-741 (2004)

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