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Optics Express

Optics Express

  • Editor: Michael Duncan
  • Vol. 14, Iss. 6 — Mar. 20, 2006
  • pp: 2344–2358

Optical waveguides in Sn2P2S6 by low fluence MeV He+ ion implantation

Andrea Guarino, Mojca Jazbinšek, Christian Herzog, Riccardo Degl’Innocenti, Gorazd Poberaj, and Peter Günter  »View Author Affiliations

Optics Express, Vol. 14, Issue 6, pp. 2344-2358 (2006)

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Planar waveguides in nonlinear optical crystals of Sn2P2S6 have been produced by He+ ion implantation. The effective indices of the waveguide have been determined and refractive index profiles have been evaluated for the indices along all three principal axes of the optical indicatrix. The depth of the induced optical barrier is ∆n1 = -0.07, ∆n2 = -0.07 and ∆n3 = -0.09 at λ = 0.633 μm for a fluence Φ = 0.5 × 1015 ions/cm2. Propagation losses for hybrid-n1 modes are α ≃ 10dB/cm.

© 2006 Optical Society of America

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.7390) Optical devices : Waveguides, planar
(260.1180) Physical optics : Crystal optics

ToC Category:
Optical Devices

Original Manuscript: January 30, 2006
Revised Manuscript: March 13, 2006
Manuscript Accepted: March 13, 2006
Published: March 20, 2006

Andrea Guarino, Mojca Jazbinšek, Christian Herzog, Riccardo Degl’Innocenti, Gorazd Poberaj, and Peter Günter, "Optical waveguides in Sn2P2S6 by low fluence MeV He+ ion implantation," Opt. Express 14, 2344-2358 (2006)

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